| 摘要 |
PROBLEM TO BE SOLVED: To provide a split gate memory cell which is useful for low-voltage operation by forming control gate and floating gate electrodes of the same deposit or growth layer, while a tunnel oxide layer is formed on the surface of a silicon substrate, on which a conductive layer is formed, separated from each other. SOLUTION: A tunnel oxide layer 12 is formed on a silicon substrate 14. A first conductive layer is formed on the tunnel oxide layer 12. Then the conductive layer is etched to form a trench, forming a dielectric layer 20 at an exposed surface part. On the dielectric layer 20, a second conductive layer 22 which is to be a second control/gate electrode is deposited. Thus, a space is provided between conductive layers 16, with one layer constituting a first gate electrode, so that the other layer is split into two different layers to be a floating gate electrode of a device. Thus, a split gate memory cell device useful for low- voltage operation is manufactured.
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