COLLECTIVE ETCHING OF MULTILAYER DIFFERENT KIND INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To carry out etching a multiplayer sample of an organic SOG based insulating film having low permittivity and SiO2 collectively at high rate with good profile. SOLUTION: The ratio of oxygen gas flow rate to etching gas flow rate is set in the range of 0.7-1.3 using a semi-gap parallel plate type UHF band ECR plasma etching system. A gas containing at least any one kind of elements of carbon, fluorine and hydrogen is employed as an etching gas and a gas which can supplying oxygen through dissociation in plasma is employed as an alternative gas of oxygen gas.