| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor which can be miniaturized and improved in sensitivity and accuracy, and a method of its manufacturing. SOLUTION: A pressure guide hole 6, whose aperture area becomes smaller between from one to the other surface in the thickness direction of a single- crystalline silicon wafer 1 is formed on a sensor chip A. A thin film made of a thermal oxide film 5 is formed as a diaphragm part 20, with is pressed by closing an aperture surface of the pressure guide hole 6 on one surface of the single-crystalline silicon wafer 1. Since the opening area of the pressure guide hole 6 formed on the sensor chip A is smaller than the area of the diaphragm part 20, the sensor chip A can be miniaturized. Since the diaphragm part 20 comprises the thin film made of the thermal oxide film 5, the diaphragm part 20 can be thinner in thickness. Moreover, the uniformity of the thickness of the diaphragm part 20 in the inside surface of the diaphragm 20 or the inside of the wafer can be improved. Thereby, the sensitivity and the accuracy can be improved.
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