发明名称 METHOD FOR MEASURING TEMPERATURE OF SEMICONDUCTOR WAFER FOR TEMPERATURE MONITOR
摘要 PROBLEM TO BE SOLVED: To learn the humidity distribution on the surface of a semiconductor wafer in a short time by obtaining the humidity distribution on the semiconductor wafer for a temperature monitor in a thermal treatment process based on a relation between sheet resistance and a thermal treatment temperature, which is previously obtained. SOLUTION: Pressure in a load locking room 6 and pressure in a treatment container 30 are set to be almost similar. A gate valve G1 is opened and the load locking room 6 and the treatment container 30 are connected. A semiconductor wafer for a temperature monitor Wm is carried into the treatment container 30 and the gate valve G1 is closed. The prescribed thermal treatment is executed on the semiconductor wafer for a humidity monitor Wm. Then, a system moves to a measuring process and the semiconductor wafer for the temperature monitor Wm, which is thermally treated, is cooled to humidity at which it can be carried. It is carried into a cassette 10 and sheet resistance is obtained. The temperature distribution on the semiconductor wafer for humidity monitor Wm is obtained based on a relation between sheet resistance and thermal treatment humidity, which is obtained.
申请公布号 JP2000208524(A) 申请公布日期 2000.07.28
申请号 JP19990006507 申请日期 1999.01.13
申请人 TOKYO ELECTRON LTD 发明人 HORIGOME MASAHIRO;MURAKAMI MASASHI
分类号 H01L21/265;G01K7/16;G01K7/22;H01L21/324;H01L21/66;(IPC1-7):H01L21/324 主分类号 H01L21/265
代理机构 代理人
主权项
地址