| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating the quality of a semiconductor wafer that can conveniently evaluate characteristics of a semiconductor wafer such as a breakdown voltage characteristic of an oxide film, etc. SOLUTION: This method of evaluating the quality of a semiconductor wafer includes the steps of cleaning a semiconductor wafer surface a plurality of times by using a mixture solution of NH4OH, H2O2 and H2O at a compounding ratio with a high etch selectivity against defects and surface roughness present near the semiconductor wafer surface, and evaluating the quality of the semiconductor wafer surface by measuring the distribution of light point defects(LPD) in the wafer surface by using a surface inspecting device using a high-intensity light source such as a laser, etc.
|
