| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN semiconductor element, which can be easily manufactured while the element simultaneously has an ohmic electrode and a Schottky electrode, and a manufacturing method of the element. SOLUTION: Other GaN crystal layer 2 is directly or indirectly grown on an n-type GaN crystal layer 1, and dry etching is partially performed on the layer 2 from the natural upper surface 2a of the above layer 2 as done by a crystal growth, whereby a partially exposed surface 1b is formed on the layer 1. In this state, electrodes are respectively formed (preferably simultaneously) on the above two surfaces 2a and 3b using the same electrode material of a work function of 5 eV or higher. As a result, the ohmic electrode 3 is formed on the exposed surface 1b, the Schottky electrode 4 is formed on the upper surface 2a of the layer 2 and a GaN semiconductor element is obtained. |
