| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve throughput by simplifying parameter setting by extracting a region with the same pattern area density and fixing a mask bias amount to be led out by using a specified approximate formula to a fixed distance from a pattern end. SOLUTION: A region having fixed pattern area density is extracted. A pattern end is divided into a rectangular mesh. A size of a mask opening of a correction region 100 is enlarged from a design size X to sizes Y, Z for proximity effect correction. Since a fixed region which requires proximity effect correction is extracted and subjected to correction by using a simple formula, a mask bias amount can be readily calculated in a short time. Each parameter used for a formula can be determined from pattern data and information of acceleration voltage in advance, and parameter setting by simulation and experiment is not required.</p> |
