| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor evaluating method and a defect position specifying device, with which a defect position can be three-dimensionally specified. SOLUTION: In a semiconductor evaluating method 100, a defect condition detecting process 110, a defect position specifying process 120 and a defect factor analyzing process 130 are successively executed. Furthermore, in the defect position specifying process 120, a first optical induced current (OBIC) process 122 corresponding to a first process, a second OBIC process 124 corresponding to a second process and an analytic process 126 corresponding to a third process are performed. In the first OBIC process 122 and the second OBIC process 124, an observation plane is irradiated with a laser beam at respectively different irradiating angles and two mutually different pieces of planar information at defect positions are detected from the relation of the irradiated positions and OBIC. In the analysis process 126, the defect position is specified three-dimensionally from such two pieces of mutually different planar information.
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