| 摘要 |
PROBLEM TO BE SOLVED: To provide a stable laminated layer made of a semiconductor thin film and an insulating film, by reducing a defect in an interface with upper and lower insulating films when a good polycrystal semiconductor thin film is formed in a low temperature process. SOLUTION: When a laminated layer made up of a semiconductor thin film 15 and a lower insulating film 14 is formed on a substrate 11, the semiconductor thin film 15 is grown in a vacuum chamber in a chemical vapor growth (catalytic CVD) by using a catalyst. The insulating film 14 is, as an example, grown in a chemical vapor growth (plasma CVD) using plasma. In this case, the insulating film 14 and the semiconductor thin film 15 are formed continuously without breaking vacuum state.
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