| 摘要 |
PROBLEM TO BE SOLVED: To enhance heat radiation and uniformize grounding inductance and emitter wiring resistance in a bipolar transistor. SOLUTION: This bipolar transistor comprises a circular emitter electrode 11, an annular base electrode 12 formed in a layer lower than the emitter electrode 11 surrounding the emitter electrode 11, and a collector electrode 13 formed in a lower layer than the base electrode 12 surrounding the base electrode 12. The emitter electrode 11 is constituted circular form, and the base electrode 12 and collector electrode 13 are disposed surrounding it. Therefore, a heat focus on the emitter electrode 11 can be restricted, and in its turn, heat radiation of a transistor can be enhanced.
|
