| 摘要 |
PROBLEM TO BE SOLVED: To reduce loss by forming a rectifier element having a gate electrode facing a first conductivity type base layer and second conductivity type base layer through a gate insulation film thereby applying a diode having small recovery charges without increasing the electric resistance during conduction. SOLUTION: An n-type base layer 2 is formed on an n-type emitter layer 1 and a p-type emitter layer 3 is formed selectively in the n-type base layer 2. A gate electrode 5 is then formed on the surface of the n-type base layer 2 and the p-type emitter layer 3 through a gate oxide film 4. Furthermore, an anode electrode 6 is formed contiguously to the p-type emitter layer 3 in a region different from that of the gate electrode 5 and a cathode electrode 7 is formed contiguously to the n-type emitter layer 1. A second conductivity type inversion layer 8 is formed in the first conductivity type base layer 2 directly under the insulation gate 4 by applying a voltage thereto and carrier density in the first conductivity type base layer 2 is increased thus lowering the resistance. |
