| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor epitaxial wafer for light-receiving element which is low in dark current value and is little in malfunction. SOLUTION: A semiconductor epitaxial wafer is a semiconductor epitaxial wafer for light-receiving element of receiving electromagnetic waves of a wavelength of 1.1μm or longer to 1.6μm or shorter, and is provided with a III-V compound semiconductor substrate 2 and a buffer layer 3, a light-receiving layer 4 and an epitaxial layer comprising a window layer 4 which are formed on the substrate 2. The centerline mean roughness Ra measured in the range of a length of 50 to 200μm on the uppermost surface of the above epitaxial layer is 3 nm or lower. Moreover, the semiconductor epitaxial wafer is a semiconductor epitaxial wafer for light-receiving element for receiving electromagnetic waves of a wavelength of 1.8μm or longer and 3.0μm or shorter, and the centerline mean roughness Ra measured in the range of a length of 50 to 200μm on the uppermost surface of the epitaxial layer of the semiconductor epitaxial wafer is 6 nm or lower.
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