| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of crystal defects from the corner part of a trench (groove) formed on a semiconductor substrate by relaxing thermal stress, when a thermal oxide film is formed on the inner surface of the trench. SOLUTION: This method is composed of a process for forming an etching resistant film 24 on a semiconductor substrate 11, a process for forming a groove 12 on the semiconductor substrate 11, by etching the semiconductor substrate 11 with the etching resistant film 24 as a mask, a process for introducing impurities through the opening part of the groove 12, by adding an injection angle through ion injection to a corner part 12a at the opening end of the groove 12 and to the semiconductor substrate 11 of peripheral parts thereof, and a process for forming an insulating film 13 by thermally oxidizing the semiconductor substrate 11 on the inner surface of the groove 12.
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