| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it, having superior characteristics wherein a polycide electrode of superior properties is formed. SOLUTION: This semiconductor device is composed of a first polycrystalline silicon layer 12, a metal silicide layer 14 and a second polycrystalline silicon layer 15 are laminated in this order, and the first polycrystalline silicon layer 12 and the second polycrystalline silicon layer 15 are formed in the same flat planar pattern. The metal silicide layer 14 is formed in a pattern contained in the same planar surface pattern as described, and the side surface of the metal silicide layer 14 is covered with the second polycrystalline silicon layer 15. In this way, a semiconductor device having the electrode layer 9A which the side face of the metal silicide layer 14 is covered by the second polycrystalline silicon layer 15, is constituted.
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