METHOD AND DEVICE FOR MANUFACTURE OF SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To raise productivity of laser anneal and improve quality of a crystallized semiconductor thin film by stacking a semiconductor thin film by repeating a deposition process and a laser anneal process alternately without exposing a substrate to the air. SOLUTION: A semiconductor thin film manufacturing device comprises a deposition chamber 10 for forming a semiconductor thin film which is amorphous or polycrystalline with relatively small grain diameter on a substrate and a laser anneal chamber 50 which converts amorphous or polycrystal of a relatively small grain diameter to polycrystal of relatively large diameter at once by casting laser beam with a specified sectional area to a specified region of a semiconductor thin film. A vacuum carrier chamber 90 is provided between the deposition chamber 10 and the laser anneal chamber 50, and a deposition process and a laser anneal process can be repeated alternately by desired frequency without exposing a substrate to the air. A load/unload chamber 70 is connected to the vacuum carrier chamber 90.