| 摘要 |
PROBLEM TO BE SOLVED: To provide a machining method of silicon substrate in which trenches having significantly different depth can be made easily in a silicon substrate. SOLUTION: A machining method of silicon substrate comprises a step 101 for depositing an oxide film of specified thickness corresponding to a shallow trench in a silicon substrate, a step 102 for forming a mask pattern on the oxide film, a step 103 for etching the silicon substrate to form the etching mask pattern of oxide film, and a step 104 for depositing an oxide film having thickness T determined according to a specified operational expression on the oxide film mask pattern. The machining method further comprises a step 105 for forming an oxide film etching mask pattern corresponding to a deep trench in the upper surface of the oxide film, a step 106 for forming the mask pattern on the upper surface of the silicon substrate 1, and a step 107 for making two trenches of desired profile and depth in the silicon substrate 1 by etching.
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