| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a SiO2-GeO2 thin film while assisting with ion beams so that generation and alignment of dipoles can be performed as continuous treatment by controlling the injection energy of ions, and especially to obtain enough nonlinear optical characteristics. SOLUTION: SiO2-GeO2 glass is irradiated with electrons to form a SiO2-GeO2 thin film 12 by electron beam vapor deposition on the surface of a substrate 10. In this method, argon ion is injected at a same time to assist with ion beams. By this method, dipoles 14 are generated in the SiO2-GeO2 thin film 12. Then the injection energy of the argon ion is reduced to deposit argon ion on the surface of the SiO2-GeO2 thin film 12. A lower electrode 16 is disposed on the back surface of the substrate 10 and grounded. Thereby, the dipoles 14 are aligned by the electric field produced between the argon ion and the lower electrode 16, which develops nonlinear optical characteristics in the SiO2-GeO2 thin film 12.</p> |
