GROWING METHOD OF SEMICONDUCTOR LAYER, MANUFACTURE OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor light emitting device which is restrained from varying in properties such as an operation voltage and the like when it is manufactured, capable of operating on a low voltage, long in service life, and high in yield. SOLUTION: An semiconductor laser of SCH structure(separate confinement hetero-structure) is composed of a ZnCoSe active layer, a ZnSSe optical wave- guide layer, and a ZnMgSSe clad layer, all P-type ZnTe quantum well layers 12a constituting a P-type ZnSe/ZnTeMQW(multi-quantum well) layer 12 of P-type contact layer are set nearly in the same thickness, and P-type ZnSe barrier layers 12v are set all in the same thickness. The P-type ZnTe quantum well layers 12a and the P-type ZnSe barrier layers 12b constituting the P-type ZnSe/ZnTeMQW layer 12 are grown in a desired thickness in a growing time almost an integer times as long as a rotation period of the substrate.