| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM cell which is high-integrated and operates at a low voltage by providing a specific load transistor above a drive transistor and transfer transistor, and forming a barrier layer between the drive transistor and transfer transistor and the load transistor. SOLUTION: Two drive transistors Q1 and Q2 and two transfer transistors Q5 and Q6 are formed, as well as load transistors Q3 and Q4 comprising two TFTs formed above these transistors via an inter-layer insulating film 10. The load transistors Q3 and Q4 comprises an active region 5 comprising a silicon film, wherein the crystallinity of an amorphous silicon is improved by a solid- phase growth technology. Between the inter-layer insulating film 10 and the load transistors Q3 and Q4, a barrier layer 3, which prevents a catalyst element from diffusing into the drive transistors Q1 and Q2 and the transfer transistors Q5 and Q6, is formed. Thus, high integration, high mobility, and low-drive- voltage operation become possible. |
