SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To enhance adhesion of a bonding pad to a wire. SOLUTION: In this semiconductor integrated circuit device, an Al wire 35 of an uppermost layer is constituted by a composite film, comprising a first barrier metal constituted by lamination films of a Ti film 30 and a TiN film 32, and a second barrier metal constituted by an Al-Si-Cu film 33 deposited on this barrier metal and a TiN film 34 deposited on the Al-Si-Cu film 33, thereby preventing deposition of a reaction product of Al and Ti on the surface of a bonding pad.