| 摘要 |
PROBLEM TO BE SOLVED: To simplify the production process of a thin film transistor(TFT) substrate. SOLUTION: After a protective film is vapor deposited, a positive photosensitive film PR is applied thereon. The photosensitive film is irradiated with light through a mask having different transmittance in the screen display region D and in the peripheral region P, and developed to form a photosensitive film pattern having different thickness. The photosensitive film pattern in the screen display region D consists of a thin part C and thick part A, while the photosensitive film pattern in the peripheral region P consists of a thick part A and a part B with no film. The part B in the peripheral region P, namely, the protective film 70, semiconductor layer 42 and gate insulating film 30 on a gate pad 24, and the protective film 70 on a data pad 64 are removed. The part A in the screen display region D, namely, the protective film 70 which covers the drain electrode, data lines except a part of data lines, and the area between the source and drain electrodes is left, while the thin photosensitive film in the part C and the protective film 70 and semiconductor layer 42 under the part C are removed. |
