| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxygen from being diffused from a high dielectric layer composed of a material having a high dielectric constant to a titanium nitride layer by arranging a diffusion barrier layer between the titanium nitride layer and material layer. SOLUTION: A diffusion barrier layer 100 is arranged between a Ta2O5 layer 105 and a TiN layer 110 so as to prevent the oxygen in the Ta2O5 layer 105 from being diffused to the TiN layer 110 and, accordingly, Ta2O5 layer 105 from being reduced to element Ta. In this embodiment, the barrier layer 100 contains one or a plurality of layers. For example, the barrier layer 100 contains a single metal carbide layer, a single metal nitride layer, a single metal boride layer, a single metal carbide-nitride layer, and a single silicon carbide layer. In other words, the diffusion barrier layer 110 prevents the diffusion of oxygen from the high dielectric layer 105 composed of a material having a high dielectric constant to the titanium nitride layer 110, because the layer 100 contains one or a plurality of layers and each layer contains a material selected from a group composed of a metal carbide, a metal nitride, a metal boride, a metallic carbon nitride, and silicon carbide. |
