发明名称 CHARGED PARTICLE BEAM DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT USING IT
摘要 PROBLEM TO BE SOLVED: To reduce the positional fluctuation of a charged particle beam caused by the electrification of contamination deposited on the structure constituting a charged particle beam path. SOLUTION: The first draw 3 of an electron beam lithography device, a deflector 4, the second draw 6, an objective draw 8, a deflector 9 and an electron detector 13 are formed by a substance having a photocatalytic action, and light sources 14A to 14E are attached. A photocatalytic reaction is generated by irradiating fluorescent substance having a photocatalytic action with the light sources 14A to 14E, and the contamination deposited on the structure is removed. Besides, a light having a specific wavelength is generated from a phosphoric substance by irradiating fluorescent substance with a charged particle beam, and the contamination deposited on the structure can be decomposed by irradiation with the light to the structure having a photocatalytic action.
申请公布号 JP2000208405(A) 申请公布日期 2000.07.28
申请号 JP19990009583 申请日期 1999.01.18
申请人 HITACHI LTD 发明人 OTA HIROYA;KATO SHINICHI;SOMETA YASUHIRO;HAYATA YASUNARI;SAITO NORIO
分类号 H01J37/16;B01J21/06;B01J35/02;H01J37/305;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01J37/16
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