| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric converter containing a two-dimensional Schottky type sensor and a thin-film transistor, or a two-dimensional PIN type photodiode sensor and a thin-film transistor. SOLUTION: In a photoelectric converter, wherein a photoelectric conversion part, a switching element and by means of a pixel electrode and a wiring, a plurality of pixels are formed on a substrate and arrayed two-dimensionally, the photoelectric conversion part S is composed of a common electrode and a semiconductor layer, and the pixel electrodes 108 and 109 comprise a semiconductor layer and a layer forming a Schottky junction. The photoelectric conversion part S comprises a first conductive type semiconductor layer 104 and a semiconductor layer forming a photoelectric conversion layer, and the first conductive type semiconductor layer 104 is utilized for the common electrode.
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