发明名称 METHOD AND SYSTEM FOR TUNGSTEN PLASMA ETCHING
摘要 PROBLEM TO BE SOLVED: To prevent the in-plane uniformity of a semiconductor wafer from being damaged by employing quartz as the material of a focus ring with oxygen existing in the quartz. SOLUTION: A lower electrode 5 is disposed oppositely to an upper electrode 4 in parallel therewith in the center on the bottom face of a chamber 1. Central part of the upper surface of the lower electrode 5 serves as a part 6 for mounting a semiconductor wafer 7. A focus ring 8 made of quartz is arranged around the semiconductor wafer 7 on the lower electrode 5. Oxygen exists in the quartz of the focus ring 8 and reaction products are converted into volatile substances by that oxygen. Since the reaction products do not stand but evaporate quickly, in-plan uniformity of the semiconductor wafer 7 is prevented from being damaged by the focus ring 8.
申请公布号 JP2000208492(A) 申请公布日期 2000.07.28
申请号 JP19990008630 申请日期 1999.01.18
申请人 SONY CORP 发明人 YAMASHITA YOSHIHIRO
分类号 H01L21/302;C23F4/00;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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