| 摘要 |
PROBLEM TO BE SOLVED: To achieve fast deposition by rotating a plurality of wafers whose mutual interval is set at least at a specified value and jetting a practically total amount of reaction gas fed to a clearance between wafers from a position in proximity to an end edge of a wafer. SOLUTION: A plurality of wafers 5 whose mutual interval is set at about 5 mm or more are rotated around a shaft at right angles to a surface of the wafer 5. A practically total amount of reaction gas fed to a clearance between the wafers 5 is jet from a position 17 in proximity to an end edge of the wafer 5. Preferably, a practically total amount of reaction gas discharged from a clearance between the wafers 5 is sucked from a position opposite to the position 17. Since a practically total amount of reaction gas is made to flow parallel on a surface of the wafer 5 from the position 17 in a circumference of the wafer 5 as above regarding feeding of reaction gas to a clearance between the wafers 5, growth speed can be greatly increased.
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