| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form a semiconductor thin film made of good crystallized polysilicon all over an insulating substrate. SOLUTION: A step for forming a semiconductor thin film 4 made of amorphous or polycrystalline type material with relatively small grain size on a substrate 0 extended in longitudinal and sidewise directions, and a step for casting an energy beam like a laser beam 50 intermittently to the semiconductor thin film 4 while the substrate 0 is scanned with the energy beam, to change the amorphous or polycrystalline type material with relatively small grain size to the polycrystalline type with relatively large grain size are carried out. In the irradiation step, the irradiation region of the energy beam is reformed to an elongated shape in parallel with a sidewise direction (Y direction) and the energy beam is cast all over the semiconductor thin film without overlapping the irradiation regions in the sidewise direction, while the substrate 0 is scanned partly in an overlapped state in a lengthwise direction (X direction).
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