| 摘要 |
PROBLEM TO BE SOLVED: To provide the production method of a semiconductor device with which a phenomenon such as pressure resistance degradation, threshold voltage reduction and leakage at a concrete part caused by recessing an insulating film to be used for groove separation at a groove end can be suppressed. SOLUTION: After a pad oxide film 2, a silicon nitride film 3 and a resist film 4 are formed in order on a silicon substrate 1, the resist film 4 is patterned by photolithography, and a groove is formed by etching the silicon nitride film 3, the pad oxide film 2 and silicon substrate 1 with the resist film 4 as a mask. After this groove is formed, the silicon nitride film 3 of a stopper film is etched, and the opening part of the silicon nitride film 3 is widened rather than the groove. Afterwards, the resist film 4 is released and while using bias-plasma chemical vapor deposition(CVD), a silicon oxide film 5 is formed thereafter while being embedded in the groove.
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