| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to improve output performance and repeatability in a laser irradiation apparatus and improve a productive yield and repeatability in a crystallizing method for a semiconductor thin film. SOLUTION: A deposition step is carried out to form an amorphous semiconductor thin film 4 on a substrate 0. In an irradiation step, a laser beam 50 is cast intermittently and repeated to change the amorphous state to a crystal state while the laser beam 50 is scanned relatively to the substrate 10. In this case, a high-output laser irradiation apparatus has performance for irradiating the semiconductor thin film 4 repeatedly by using the laser beam 50 of total energy of 10 J or above with an area of 10 cm2 or above for each irradiation time. The laser beam 50 is cast with a repeating frequency of 10 Hz or above, so an yield (throughput) in the crystallizing method for the semiconductor thin film 4 can be improved. In addition, the laser beam 50 with an energy distribution of±20% or below in a rectangular area not less than 10 cm2 and a variation in repeated irradiation energy under control of±1% or below is used to crystallize the semiconductor thin film 4. As a result, a polycrystal semiconductor thin film 5 with a large grain size and uniform grain sizes can be obtained.
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