| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the element size of a hetero-junction bipolar transistor and eliminating efficiently heat generated inside an element. SOLUTION: In this hetero-junction bipolar transistor, an n+-type AlGaAs emitter layer 5, a p+-type GaAs base layer 6, an n-type GaAs collector layer 7, an n+-type GaAs collector cap layer 8, and a collector electrode 11 made of an alloy of AuGe and Ni sequentially formed on an n+-type GaAs substrate 1. An emitter electrode 13 comprising a Ti layer and Au layer on the entire reverse face of the n+-type GaAs substrate 1 are provided. There is provided a recess part 14 on the reverse face of the n+-type GaAs substrate 1 just under the n+-type AlGaAs emitter layer 5. By forming the recess part 14, a distance between the emitter layer 5, and emitter electrode 13 is reduced and a heat radiation from the emitter electrode is facilitated.
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