| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask which is capable of making resist pattern sizes uniform and a process for producing a semiconductor device. SOLUTION: Main patterns 110 designed for production of semiconductor elements and additive patterns 120 designed for regulation of exposure are drawn on a reticle 100. The additive patterns 120 of the reticle 100 have the regularity which is approximately the same as the regularity of the main patterns 110. On the other hand, the additive patterns 120 have prescribed offsets with respect to the main patterns 110. The offset quantities between the additive patterns and the main patterns on the reticle 100 are made adequate, by which the resist pattern sizes may be made uniform while the adverse influence on the formation of the element patterns is prevented. |
