| 摘要 |
PROBLEM TO BE SOLVED: To provide a means having sufficient adhesion, capable of enduring a CMP(chemical-mechanical polishing) process when manufacturing a lamination between a barrier metal and a Cu alloy, when a Cu alloy wiring is formed. SOLUTION: In this manufacturing method, after a wiring groove 3 is formed in an interlayer insulation film 2 on a semiconductor substrate 1, a Cu layer 5 and a Cu alloy layer 7 are laminated by a sputtering method via a barrier metal layer 4, thereby burying into a Cu groove by a plating film forming methods. Furthermore, when a film of Cu layer/Cu alloy layer/Cu plated buried layer 6 is formed, by conducting this at a room temperature, with the result that a close adhesion between the respective laminated layers have full strength, and a leveling process by a CMP in a next step can be executed. After the leveling process, a heat treatment is conducted, and a CU alloy wiring is obtained.
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