| 摘要 |
<p>PROBLEM TO BE SOLVED: To write and delete data in a short time and accurately. SOLUTION: A transparent electrode 10a is formed as the bottom electrode of a double gate memory 11 on a glass substrate 10. A bottom insulation film 11a is formed thereon, and a semiconductor layer 11b made of a-Si is formed corresponding to the position of the bottom electrode. A source electrode 11d and a drain electrode 11e are formed on both sides of the semiconductor layer 11b via an n+Si layer 11c. Furthermore, a top gate insulation film 11f and a top gate electrode 11g are formed sequentially thereon. Both the bottom gate insulation film 11a and top gate insulation film 11f are made of SiN, and the latter has a higher ratio of Si, so that a trap region is formed. A light emitted from an organic EL layer 11a is made to enter the semiconductor layer 11b via the transparent electrode 10a, and carriers (holes and electrons) to be trapped by the trap region is generated.</p> |
