| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile random access memory device, wherein a voltage for write-in and erasing of electric charge is lower for improved cycle possibility. SOLUTION: In this device 30, a nonvolatile random access memory(NVRAM) structure comprises an implantation element 32 in a single-crystal silicon substrate 34, an insulating layer 36 on the substrate 34, an silicon-on-insulator(SOI) layer 38 on the insulating layer 36, and a sense element 40 in an SOI layer 38 overlapping the implanting element. The NVRAM structure may further comprise a gate on the SOI layer 38 or a floating gate in the insulating layer 36, or both.
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