| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device having enhanced uniformity in the film thickness and characteristics of a semiconductor substrate by providing a cold wall type single wafer processing lamp heating furnace in which halogen gas or N2O gas can reach a wafer under thermally decomposed state when thermal oxidation is conducted in an atmosphere containing halogen gas or N2O gas using a cold wall type single wafer processing lamp heating furnace. SOLUTION: In a cold wall type single wafer processing lamp heating furnace where oxidizing gas is produced after thermal decomposition and thermal oxidation is conducted using a reactive gas for forming an oxide film on a semiconductor substrate, a plurality of heating lamps 3 are arranged above the semiconductor substrate 1 placed in a reaction chamber 2 and a plurality of gas introduction holes 22 are made between the heating lamps 3 in order to introduce the reaction gas.
|
