发明名称 METHOD AND APPARATUS FOR FILM DEPOSITION
摘要 <p>Reactive gases, such as hydrogen-base carrier gas and silane gas, are brought into contact with a heated catalyst such as tungsten. The resulting reactive seed is subjected to an electric field created by either a DC voltage below the glow voltage or the DC voltage on which an AC or RF voltage is superposed. As a result, the seed is given kinetic energy, and high-quality film such as polysilicon film is formed on a substrate by vapor phase deposition.</p>
申请公布号 WO2000044033(P1) 申请公布日期 2000.07.27
申请号 JP2000000328 申请日期 2000.01.24
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