Method of forming a flash memory cell

摘要

A method of forming a flash memory cell including a storage transistor and an access transistor comprises providing a tunnel oxide layer (801) on a substrate; depositing and patterning a floating gate (803) on said first oxide layer; providing a dielectric layer (804) over said floating gate; removing said dielectric layer except for the portion of said dielectric layer located over said floating gate; forming a gate oxide layer over a portion of said substrate exposed by the previous step (d); and depositing and patterning a conductive layer to form a control gate (805) for said storage transistor over the dielectric layer (804), and a gate (805A) for said access transistor over the gate oxide layer.