发明名称 |
Deposition of copper on an activated surface of a substrate |
摘要 |
<p>The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1-COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer. <IMAGE></p> |
申请公布号 |
EP1022355(A2) |
申请公布日期 |
2000.07.26 |
申请号 |
EP19990870243 |
申请日期 |
1999.11.30 |
申请人 |
IMEC (INTERUNIVERSITY MICROELECTRONICS CENTER) VZW |
发明人 |
PALMANS, ROGER;LANTASOV, YURI |
分类号 |
C23C18/40;H01L21/288;H01L21/768;(IPC1-7):C23C18/40 |
主分类号 |
C23C18/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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