发明名称 |
Semiconductor photonic element and fabrication method |
摘要 |
<p>A semiconductor photonic element is provided, which realize low threshold current and satisfactory characteristics in the high temperatures and/or high output operating condition. This element is comprised of (a) a semiconductor substrate; (b) a mesa structure formed on a first surface of the substrate to extend in a specific direction; the mesa structure including an active layer and a pair of p- and n-type cladding layers located respectively at top and bottom sides of the active layer, forming a double heterojunction; (c)a current-constricting structure for constricting an injection current formed at each side of the mesa structure to expose a top of the mesa structure from the current-constricting structure; the current-constricting structure comprising a first current-blocking part and a second current-blocking part; the first current-blocking part having a dielectric current-blocking layer that extends to the mesa structure; the dielectric current-blocking layer being contacted with top edges of the mesa structure; the second current-blocking part having a semiconductor current-blocking layer; and (d) a semiconductor burying layer formed to cover the mesa structure and the multilayer current-constricting structure; the semiconductor burying layer being contacted with the top of the mesa structure. <IMAGE></p> |
申请公布号 |
EP1022827(A2) |
申请公布日期 |
2000.07.26 |
申请号 |
EP20000400159 |
申请日期 |
2000.01.21 |
申请人 |
NEC CORPORATION |
发明人 |
YOKOYAMA, YOSHITAKA;KUDO, KOJI;TSUJI, MASAYOSHI |
分类号 |
H01S5/00;H01S5/026;H01S5/20;H01S5/22;H01S5/227;H01S5/40;(IPC1-7):H01S5/227 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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