发明名称 |
POSITIVE TYPE RESIST COMPOSITION AND MONOMER CONTAINING ACID DISSOCIATIVE GROUP USED TO THE SAME |
摘要 |
PURPOSE: A positive type resist composition is provided, which forms a resist pattern having excellent electron-beam resistance due to be good at sensitivity, resolution property, pattern profile formation. CONSTITUTION: A positive type resist composition comprises polymer containing the unit represented by the following formula(1) and photo acid generator, wherein R represents hydrogen atom or low alkyl group, R' represents alkyl group of two more carbon number and n is 0 or 1. The monomer containing the acid dissociative group represented by the following formula(6), wherein R represents hydrogen atom or low alkyl group and R' represents alkyl group of two more carbon number. |
申请公布号 |
KR20000048190(A) |
申请公布日期 |
2000.07.25 |
申请号 |
KR19990058366 |
申请日期 |
1999.12.16 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
HADAHITEAO;EWHAEKAKESI;HUJIMURADATOSI;GATASIMAMIWHA |
分类号 |
H01L21/027;C07C69/753;C08F222/06;C08F232/00;C08L35/00;C08L45/00;G03F7/039 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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