发明名称 POSITIVE TYPE RESIST COMPOSITION AND MONOMER CONTAINING ACID DISSOCIATIVE GROUP USED TO THE SAME
摘要 PURPOSE: A positive type resist composition is provided, which forms a resist pattern having excellent electron-beam resistance due to be good at sensitivity, resolution property, pattern profile formation. CONSTITUTION: A positive type resist composition comprises polymer containing the unit represented by the following formula(1) and photo acid generator, wherein R represents hydrogen atom or low alkyl group, R' represents alkyl group of two more carbon number and n is 0 or 1. The monomer containing the acid dissociative group represented by the following formula(6), wherein R represents hydrogen atom or low alkyl group and R' represents alkyl group of two more carbon number.
申请公布号 KR20000048190(A) 申请公布日期 2000.07.25
申请号 KR19990058366 申请日期 1999.12.16
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 HADAHITEAO;EWHAEKAKESI;HUJIMURADATOSI;GATASIMAMIWHA
分类号 H01L21/027;C07C69/753;C08F222/06;C08F232/00;C08L35/00;C08L45/00;G03F7/039 主分类号 H01L21/027
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