| 摘要 |
PURPOSE: An apparatus for forming a planarized insulating layer having a low hygroscopic property and an improved membranous property is provided. CONSTITUTION: An apparatus(301) which forms a planarized insulating layer for covering interconnection layers of a semiconductor integrated circuit device includes a first source supply unit for supplying phosphorus-containing compound sources, a second source supply unit for supplying silicon-containing compound sources, and a third source supply unit for supplying oxidizing gas sources. The apparatus(301) further includes a reaction chamber(203) connected with the respective source supply units and a planarization chamber(204) connected with the reaction chamber(203) through a transfer chamber(201). The sources introduced to the reaction chamber(203) are reacted and then form the insulating layer. The deposition substrate coated with the insulating layer is then transferred to the planarization chamber(204) without contacting with the atmosphere, and heated, fluidized, and planarized. The apparatus(301) may further include load lock chambers(202a,202b) for loading or unloading the substrate to or from the transfer chamber(201), and a cooling chamber(205).
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