| 摘要 |
The problem to be solved by the present invention is providing a production method capable of adjusting a dislocation density freely to a required dislocation density level for a discrete structure substrate. According to the present invention, when producing a discrete structure substrate generally said to have a low level dislocation density in which an average dislocation density is 5000 pieces/cm2, diffusing a wafer after determining its thickness so as to meet required dislocation density level, a wafer thickness is adjusted within a specified range before diffusion is carried out.
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