| 摘要 |
A semiconductor memory device is provided which is capable of realizing a redundancy memory cell test to be performed before a defective memory cell is replaced by a redundancy memory cell with a small size circuit provided therein. The semiconductor memory device includes a redundancy address program circuit programmed such that a redundancy memory cell is selected when an address for selecting a defective memory cell, for generating a redundancy selection signal, and a circuit for receiving a redundancy circuit test mode signal which is made active when the redundancy memory cell is tested before the redundancy address program circuit is programmed to generate a portion of the input address as a portion of the address of the redundancy memory cell when the redundancy circuit test mode signal is active and generate the redundancy selection signal as a portion of the address of the redundancy memory cell when the redundancy circuit test mode signal is inactive.
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