SEMICONDUCTOR DEVICE, IMAGE DISPLAY DEVICE, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND IMAGE DISPLAY DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device having a CMOS-TFT is provided which can establish a threshold voltage of the CMOS-TFT easily and very accurately. CONSTITUTION: According to a method for fabricating a semiconductor device having a CMOS-TFT, a selective addition and a non-selective addition of a P-type impurity(Boron) are performed continuously to control a threshold voltage(Vthp,Vthn). The method includes the processes of: adding the P-type impurity into the whole structure including a P-type and an N-type transistor region of a thin film non-selectively; adding the P-type impurity into an N-type thin film transistor of the thin film selectively; and activating the added P-type impurity by annealing the thin film. The threshold voltages of the P-type and the N-type thin film transistor are established independently by the non-selective and selective addition.