| 摘要 |
PURPOSE: A method for writing a partially blanket wafer pattern for a charged particle beam lithography is provided to improve the transfer accuracy of lithographed pattern. CONSTITUTION: In this method, a pattern product(24) is extracted from interlayer calculation between pattern data of both a lithographed layer for a gate electrode and an underlying base layer for a diffusion pattern. Next, the gate electrode pattern closely adjacent to both boundaries(26,28) of the pattern product(24) is included as a margin(30,32) in an extended pattern. Based upon the extended pattern, a partially blanket wafer pattern(34) is then written as data. Additionally, the partially blanket wafer pattern(34) is positioned within an imaginary boundary(36). A required mask is manufactured by the data of the pattern(34), and the imaginary boundary(36) is used for defining the border between the neighboring patterns(34) on the mask. The lithographed pattern can be transferred with high accuracy onto the base layer by using the mask having the partially blanket wafer pattern(34).
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