| 摘要 |
PURPOSE: A semiconductor apparatus and a method for the same are provided to effectively restrain a delay of a signal transmission and reduce the cost of manufacture. CONSTITUTION: A semiconductor apparatus having a dual damascene structure includes a semiconductor substrate(1) having a lower wiring layer and an electron device. A first interlayer insulating film(2) is formed on the substrate. A second interlayer insulating film(3), which is composed of SiO2 containing a carbon, is formed on the first interlayer insulating film. A third interlayer insulating film(5) is formed on the second interlayer insulating film. A fourth interlayer insulating film, which is composed of SiO2 containing a carbon, is formed on the third interlayer insulating film. A via hole(8,8a) penetrates the first and second interlayer insulating films and exposes the substrate. A recess is formed in the third interlayer insulating film and overlapped with the via hole to connect to the via hole. A metal plug is formed in the via hole so as to connect the electron device or the low wiring layer into the substrate. A metal wiring layer is formed in the recess. A fourth interlayer insulating film is formed on the third interlayer insulating film so as to cover the metal wiring layer.
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