| 摘要 |
PURPOSE: A method for manufacturing a semiconductor integrated circuit apparatus is provided to improve a device characteristics or reliability according to a hydrogen annealing regardless of a device structure of the surface of a substrate, thereby improving the yield of the semiconductor integrated circuit apparatus. CONSTITUTION: A method for manufacturing a semiconductor integrated circuit apparatus includes a hydrogen annealing process annealing a semiconductor substrate(1), on which a device is formed and an interlayer insulating film(7) is formed, under a hydrogen atmosphere. The hydrogen annealing is performed at a temperature higher than a separation starting temperature at which separation of a hydrogen arriving at an interface between the semiconductor substrate and an insulating region and degrading the level of the interface is started from the interface under an inactivity atmosphere. After the annealing is performed and the temperature is descended below the separation starting temperature under the hydrogen atmosphere, the substrate, on which the device is formed, is unloaded.
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