| 摘要 |
PURPOSE: A semiconductor device including logic circuits and memory circuits is provided to reduce resistance of auxiliary bit lines and to increase the access speed of non-volatile memory circuits by sharing the wiring process of non-volatile memory circuits with one of logic circuits. CONSTITUTION: A non-volatile memory consists of a main bit line(1), plural auxiliary bit lines(3), and several transistors(2) for selecting the auxiliary bit lines and plural memory cells(4). Each transistor is connected between the auxiliary and main bit lines and each gate of the transistors is coupled with one of word lines(10) for selecting the auxiliary bit lines. The memory cell is composed of plural transistors(5) for selecting memory cells and several non-volatile memory cell transistors(6) such as EEPROM(electrically erasable programmable read only memory). Each auxiliary bit line is connected to the main bit line if the transistor(2) is decided depending on signals of the word line(10). The memory cell transistor of selected auxiliary bit line is selected by a word line(8) for selecting memory cells and contacted to a source line(9) through the transistor(5) to be contacted between the source line and main bit line. A circuit connected to the main bit line detects the data level of a cell transistor depending on if current flows in a selecting mode.
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