METHOD FOR FORMING INNER CONNECTION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an inner connection layer of a semiconductor device is to etch a device isolation layer and connect a source and drain region of a first active region with a gate of a second active region, thereby simplifying the process. CONSTITUTION: A method for forming an inner connection layer of a semiconductor device comprises the steps of: forming a device isolation region(22) in a semiconductor substrate(21) to isolate a first active region from a second active region; etching a part of the device isolation region in contact with the first active region; implanting a high concentration ion into a portion of the first active region in contact with the device isolation region to form a high concentration impurity region(24); forming a first gate on a selected portion of the first active region and a second gate(25) on a portion including a part of the high concentration impurity region, the device isolation region and a part of the second active region; implanting a low concentration impurity ion into the first active region using the first and second gate as a mask; forming a spacer(27) on side walls of the first and second gate; and implanting a high concentration impurity ion into the first active region using the first and second gate and the spacer as a mask to form a source and drain(28) having a lightly doped drain(LDD) structure.