| 摘要 |
A field emission device (400) includes a substrate (414), a cathode (415) disposed on substrate (414), a dielectric layer (418) disposed on cathode (415) and defining an emitter well (421) and further defining a focusing well (448), an electron emitter (420) disposed within emitter well (421) and connected to cathode (415), a gate electrode (422) disposed on dielectric layer (418), and a focusing structure (450) disposed within focusing well (448) and connected to cathode (415) for focusing an electron beam (430) emitted by electron emitter (420). A method for fabricating field emission device (400) includes directing a second collimated vapor beam (461) toward focusing well (448) subsequent to forming an encapsulating layer (478) over emitter well (421), thereby forming focusing structure (450).
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